1200-V 5.2-mΩ · cm2 4H-SiC BJTs with a high common-emitter current gain

Hyung Seok Lee; Martin Domeij; Carl Mikael Zetterling; Mikael Östling; Fredrik Allerstam; Einar Ö Sveinbjörnsson

doi:10.1109/LED.2007.907418

1200-V 5.2-mΩ · cm² 4H-SiC BJTs with a high common-emitter current gain

Hyung Seok Lee
, Martin Domeij
, Carl Mikael Zetterling
, Mikael Östling
, Fredrik Allerstam
, Einar Ö Sveinbjörnsson

Faculty of Physical Sciences

University of Iceland

Research output: Contribution to journal › Article › peer-review

Abstract

This letter presents fabrication of a power 4H-SiC bipolar junction transistor (BJT) with a high open-base breakdown voltage BV_CEO ≈ 1200 V, a low specific ON-resistance RSP_ON ≈ 5.2 mΩ · cm², and a high common-emitter current gain β ≈ 60. The high gain of the BJT is attributed to reduced surface recombination that has been obtained using passivation by thermal silicon dioxide grown in nitrous oxide (N₂O) ambient. Reference BJTs with passivation by conventional dry thermal oxidation show a clearly lower current gain and a more pronounced emitter-size effect. BJTs with junction termination by a guard-ring-assisted junction-termination extension (JTE) show about 400 V higher breakdown voltage compared with BJTs with a conventional JTE.

Original language	English
Pages (from-to)	1007-1009
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	11
DOIs	https://doi.org/10.1109/LED.2007.907418
Publication status	Published - Nov 2007

Other keywords

4H-silicon carbide
Bipolar junction transistors (BJTs)
Current gain
Emitter-size effect
High voltage
Surface recombination

Access to Document

10.1109/LED.2007.907418

Cite this

@article{26cfe6f6eb2b4c99b5f058b9e43d9672,

title = "1200-V 5.2-mΩ · cm2 4H-SiC BJTs with a high common-emitter current gain",

abstract = "This letter presents fabrication of a power 4H-SiC bipolar junction transistor (BJT) with a high open-base breakdown voltage BVCEO ≈ 1200 V, a low specific ON-resistance RSP\_ON ≈ 5.2 mΩ · cm2, and a high common-emitter current gain β ≈ 60. The high gain of the BJT is attributed to reduced surface recombination that has been obtained using passivation by thermal silicon dioxide grown in nitrous oxide (N2O) ambient. Reference BJTs with passivation by conventional dry thermal oxidation show a clearly lower current gain and a more pronounced emitter-size effect. BJTs with junction termination by a guard-ring-assisted junction-termination extension (JTE) show about 400 V higher breakdown voltage compared with BJTs with a conventional JTE.",

keywords = "4H-silicon carbide, Bipolar junction transistors (BJTs), Current gain, Emitter-size effect, High voltage, Surface recombination",

author = "Lee, \{Hyung Seok\} and Martin Domeij and Zetterling, \{Carl Mikael\} and Mikael {\"O}stling and Fredrik Allerstam and Sveinbj{\"o}rnsson, \{Einar {\"O}\}",

year = "2007",

month = nov,

doi = "10.1109/LED.2007.907418",

language = "English",

volume = "28",

pages = "1007--1009",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - 1200-V 5.2-mΩ · cm2 4H-SiC BJTs with a high common-emitter current gain

AU - Lee, Hyung Seok

AU - Domeij, Martin

AU - Zetterling, Carl Mikael

AU - Östling, Mikael

AU - Allerstam, Fredrik

AU - Sveinbjörnsson, Einar Ö

PY - 2007/11

Y1 - 2007/11

N2 - This letter presents fabrication of a power 4H-SiC bipolar junction transistor (BJT) with a high open-base breakdown voltage BVCEO ≈ 1200 V, a low specific ON-resistance RSP_ON ≈ 5.2 mΩ · cm2, and a high common-emitter current gain β ≈ 60. The high gain of the BJT is attributed to reduced surface recombination that has been obtained using passivation by thermal silicon dioxide grown in nitrous oxide (N2O) ambient. Reference BJTs with passivation by conventional dry thermal oxidation show a clearly lower current gain and a more pronounced emitter-size effect. BJTs with junction termination by a guard-ring-assisted junction-termination extension (JTE) show about 400 V higher breakdown voltage compared with BJTs with a conventional JTE.

AB - This letter presents fabrication of a power 4H-SiC bipolar junction transistor (BJT) with a high open-base breakdown voltage BVCEO ≈ 1200 V, a low specific ON-resistance RSP_ON ≈ 5.2 mΩ · cm2, and a high common-emitter current gain β ≈ 60. The high gain of the BJT is attributed to reduced surface recombination that has been obtained using passivation by thermal silicon dioxide grown in nitrous oxide (N2O) ambient. Reference BJTs with passivation by conventional dry thermal oxidation show a clearly lower current gain and a more pronounced emitter-size effect. BJTs with junction termination by a guard-ring-assisted junction-termination extension (JTE) show about 400 V higher breakdown voltage compared with BJTs with a conventional JTE.

KW - 4H-silicon carbide

KW - Bipolar junction transistors (BJTs)

KW - Current gain

KW - Emitter-size effect

KW - High voltage

KW - Surface recombination

UR - https://www.scopus.com/pages/publications/36148960173

U2 - 10.1109/LED.2007.907418

DO - 10.1109/LED.2007.907418

M3 - Article

SN - 0741-3106

VL - 28

SP - 1007

EP - 1009

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -