Comment on Reliable extraction of the energy distribution of Si/SiO 2 interface traps in ultrathin metal-oxide-semiconductor structures [Appl. Phys. Lett. 80, 3952 (2002)]

Per Lundgren; Einar Ö Sveinbjörnsson; Halldor Ö Olafsson

doi:10.1063/1.1519330

Comment on Reliable extraction of the energy distribution of Si/SiO ₂ interface traps in ultrathin metal-oxide-semiconductor structures [Appl. Phys. Lett. 80, 3952 (2002)]

Per Lundgren, Einar Ö Sveinbjörnsson, Halldor Ö Olafsson

Faculty of Physical Sciences

University of Iceland

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	3681-3682
Number of pages	2
Journal	Applied Physics Letters
Volume	81
Issue number	19
DOIs	https://doi.org/10.1063/1.1519330
Publication status	Published - 4 Nov 2002

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10.1063/1.1519330

Cite this

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title = "Comment on Reliable extraction of the energy distribution of Si/SiO 2 interface traps in ultrathin metal-oxide-semiconductor structures [Appl. Phys. Lett. 80, 3952 (2002)]",

author = "Per Lundgren and Sveinbj{\"o}rnsson, \{Einar {\"O}\} and Olafsson, \{Halldor {\"O}\}",

year = "2002",

month = nov,

day = "4",

doi = "10.1063/1.1519330",

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volume = "81",

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AU - Lundgren, Per

AU - Sveinbjörnsson, Einar Ö

AU - Olafsson, Halldor Ö

PY - 2002/11/4

Y1 - 2002/11/4

UR - https://www.scopus.com/pages/publications/79958232723

U2 - 10.1063/1.1519330

DO - 10.1063/1.1519330

M3 - Comment/debate

SN - 0003-6951

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SP - 3681

EP - 3682

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

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