@inproceedings{ad9f92a685ab4237a2ea03691762566f,
title = "Doping profile recognition in silicon using terahertz time-domain spectroscopy",
abstract = "Here we demonstrate for the first time that terahertz time domain spectroscopy (THz-TDS) can be used to distinguish doping profile discrepancies in semiconductor silicon wafers. These proof of concept results suggest the suitability of the technique for in-line process control applications in both IC/photovoltaic (PV) industries. The experimental results show that THz radiation is sensitive to the implant dosage changes in the time domains.",
keywords = "THz-TDS, Terahertz, doping profile recognition",
author = "Jen, \{Chih Yu\} and Christiaan Richter",
year = "2014",
doi = "10.1117/12.2036241",
language = "English",
isbn = "9780819498984",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII",
address = "United States",
note = "Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII ; Conference date: 04-02-2014 Through 06-02-2014",
}