Effects of Cu diffusion on electrical properties of GaAs

D. Seghier; H. P. Gislason

Effects of Cu diffusion on electrical properties of GaAs

D. Seghier
, H. P. Gislason

Faculty of Physical Sciences

University of Iceland

Research output: Contribution to conference › Paper › peer-review

Abstract

We investigated semi-insulating GaAs samples produced by Cu diffusion into n-type starting material by means of thermally stimulated current (TSC) and photoconductivity (PC) measurements. We show that the Cu-diffusion changes the EL2 centre into a deep donor (T3) with a lower activation energy, 0.7 eV. Similar effects have been observed in MBE GaAs grown at low temperature. The PC quenching and recovery of the T3 trap are similar to those usually observed for EL2. We conclude that the deep donor is a complex centre involving As_Ga. In addition, we observe the usual Cu acceptor levels Cu_A and Cu_B at E_v + 0.15 and E_v + 0.4 eV. The dynamics of optical quenching and thermal recovery of the TSC signal from the Cu levels suggest that they are neither related to EL2 nor two levels of the same Cu-related double acceptor.

Original language	English
Pages	161-164
Number of pages	4
Publication status	Published - 1999
Event	Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA Duration: 1 Jun 1998 → 5 Jun 1998

Conference

Conference	Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)
City	Berkeley, CA, USA
Period	1/06/98 → 5/06/98

Cite this

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title = "Effects of Cu diffusion on electrical properties of GaAs",

abstract = "We investigated semi-insulating GaAs samples produced by Cu diffusion into n-type starting material by means of thermally stimulated current (TSC) and photoconductivity (PC) measurements. We show that the Cu-diffusion changes the EL2 centre into a deep donor (T3) with a lower activation energy, 0.7 eV. Similar effects have been observed in MBE GaAs grown at low temperature. The PC quenching and recovery of the T3 trap are similar to those usually observed for EL2. We conclude that the deep donor is a complex centre involving AsGa. In addition, we observe the usual Cu acceptor levels CuA and CuB at Ev + 0.15 and Ev + 0.4 eV. The dynamics of optical quenching and thermal recovery of the TSC signal from the Cu levels suggest that they are neither related to EL2 nor two levels of the same Cu-related double acceptor.",

author = "D. Seghier and Gislason, \{H. P.\}",

year = "1999",

language = "English",

pages = "161--164",

note = "Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) ; Conference date: 01-06-1998 Through 05-06-1998",

}

TY - CONF

T1 - Effects of Cu diffusion on electrical properties of GaAs

AU - Seghier, D.

AU - Gislason, H. P.

PY - 1999

Y1 - 1999

N2 - We investigated semi-insulating GaAs samples produced by Cu diffusion into n-type starting material by means of thermally stimulated current (TSC) and photoconductivity (PC) measurements. We show that the Cu-diffusion changes the EL2 centre into a deep donor (T3) with a lower activation energy, 0.7 eV. Similar effects have been observed in MBE GaAs grown at low temperature. The PC quenching and recovery of the T3 trap are similar to those usually observed for EL2. We conclude that the deep donor is a complex centre involving AsGa. In addition, we observe the usual Cu acceptor levels CuA and CuB at Ev + 0.15 and Ev + 0.4 eV. The dynamics of optical quenching and thermal recovery of the TSC signal from the Cu levels suggest that they are neither related to EL2 nor two levels of the same Cu-related double acceptor.

AB - We investigated semi-insulating GaAs samples produced by Cu diffusion into n-type starting material by means of thermally stimulated current (TSC) and photoconductivity (PC) measurements. We show that the Cu-diffusion changes the EL2 centre into a deep donor (T3) with a lower activation energy, 0.7 eV. Similar effects have been observed in MBE GaAs grown at low temperature. The PC quenching and recovery of the T3 trap are similar to those usually observed for EL2. We conclude that the deep donor is a complex centre involving AsGa. In addition, we observe the usual Cu acceptor levels CuA and CuB at Ev + 0.15 and Ev + 0.4 eV. The dynamics of optical quenching and thermal recovery of the TSC signal from the Cu levels suggest that they are neither related to EL2 nor two levels of the same Cu-related double acceptor.

UR - https://www.scopus.com/pages/publications/0032598521

M3 - Paper

SP - 161

EP - 164

T2 - Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)

Y2 - 1 June 1998 through 5 June 1998

ER -

Effects of Cu diffusion on electrical properties of GaAs

Abstract

Conference

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