@inproceedings{8278e6086b244d7ab0df98dd4618f5e9,
title = "Electrical and structural properties of ultrathin polycrystalline and epitaxial TiN films grown by reactive dc magnetron sputtering",
abstract = "Ultrathin TiN films were grown by reactive dc magnetron sputtering on amorphous SiO2 substrates and single-crystalline MgO substrates at 600°C. The resistance of the films was monitored in-situ during growth to determine the coalescence and continuity thicknesses. TiN films grown on SiO2 are polycrystalline and have coalescence and continuity thicknesses of 8 {\AA} and 19 {\AA}, respectively. TiN films grow epitaxially on the MgO substrates and the coalescence thickness is 2 {\AA}and the thickness where the film becomes continuous cannot be resolved from the coalescence thickness. X-ray reflection measurements indicate a significantly higher density and lower roughness of the epitaxial TiN films.",
author = "F. Magnus and Ingason, \{A. S.\} and S. Olafsson and Gudmundsson, \{J. T.\}",
year = "2009",
doi = "10.1557/proc-1156-d03-05",
language = "English",
isbn = "9781605111292",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "59--64",
booktitle = "Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009",
address = "United States",
note = "2009 MRS Spring Meeting ; Conference date: 13-04-2009 Through 17-04-2009",
}