@inproceedings{d12d42d2df2441cc8d961bc31e4b8a08,
title = "Facile formation of self-Assembled Ga droplets on GaAs (001) substrate",
abstract = "We investigate the formation and evolution of Ga droplets over GaAs (001) substrate with and without Ge top layer (8 nm). Various morphological transformation from holes to droplets formation were observed as a function of annealing parameters. It was observed that the application of Ge layer plays a vital role in incorporating oxygen into the system. Moreover, a potential application of these structures as a photocathode is discussed, demonstrating increased photoemission. ",
keywords = "Ga droplet, Germanium, RTA, SEM",
author = "Sultan, \{M. T.\} and Arnason, \{H. O.\} and Ingvarsson, \{Snorri {\TH}orgeir\} and Arnalds, \{U. B.\} and Svavarsson, \{H. G.\} and A. Manolescu and A. Valfells",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 44th International Semiconductor Conference, CAS 2021 ; Conference date: 06-10-2021 Through 08-10-2021",
year = "2021",
doi = "10.1109/CAS52836.2021.9604129",
language = "English",
series = "Proceedings of the International Semiconductor Conference, CAS",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "35--38",
booktitle = "2021 International Semiconductor Conference, CAS 2021",
address = "United States",
}