Abstract
We analyze the fractional quantization of the ballistic conductance associated with the light and heavy holes bands in silicon quantum wires. It is shown that the formation of the localized hole state in the region of the quantum point contact connecting two quasi-1D hole leads modifies drastically the conductance pattern. Exchange interaction between localized and propagating holes results in the fractional quantization of the ballistic conductance different from those in electron systems. The value of the conductance at the additional plateaux depends on the offset between the bands of the light and heavy holes, Δ, and the sign of the exchange interaction constant.
| Original language | English |
|---|---|
| Pages (from-to) | 1042-1043 |
| Number of pages | 2 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 40 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Mar 2008 |
Bibliographical note
Funding Information: M.R.C. acknowledge the FINEP and MCT for the financial support. I.A.S. and N.T.B. acknowledge the support of the grants of the President of Russian Federation and SNSF, Grant IB7320-110970/1.Other keywords
- 0.7 anomaly
- Fractional conductance
- Holes
- Quantum point contact