Growth of TiO 2 thin films on Si(001) and SiO 2 by reactive high power impulse magnetron sputtering

F. Magnus; B. Agnarsson; A. S. Ingason; K. Leosson; S. Olafsson; J. T. Gudmundsson

doi:10.1557/opl.2011.1010

Growth of TiO ₂ thin films on Si(001) and SiO ₂ by reactive high power impulse magnetron sputtering

F. Magnus
, B. Agnarsson
, A. S. Ingason
, K. Leosson
, S. Olafsson
, J. T. Gudmundsson

University of Iceland

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Thin TiO ₂ films were grown on Si(001) and SiO ₂ substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700°C. Both dcMS and HiPIMS produce polycrystalline rutile TiO ₂ grains, embedded in an amorphous matrix, despite no postannealing taking place. HiPIMS results in significantly larger grains, approaching 50% of the film thickness at 700°C. In addition, the surface roughness of HiPIMS-grown films is below 1 nm rms in the temperature range 300-500°C which is an order of magnitude lower than that of dcMS-grown films. The results show that smooth, rutile TiO ₂ films can be obtained by HiPIMS at relatively low growth temperatures, without postannealing.

Original language	English
Title of host publication	Titanium Dioxide Nanomaterials
Pages	39-44
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2011.1010
Publication status	Published - 2012
Event	2011 MRS Spring Meeting - San Francisco, CA, United States Duration: 25 Apr 2011 → 29 Apr 2011

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1352

Conference

Conference	2011 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	25/04/11 → 29/04/11

Access to Document

10.1557/opl.2011.1010

Cite this

@inproceedings{63c511db66a24957b8b455d0c2531fc3,

title = "Growth of TiO 2 thin films on Si(001) and SiO 2 by reactive high power impulse magnetron sputtering",

abstract = "Thin TiO 2 films were grown on Si(001) and SiO 2 substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700°C. Both dcMS and HiPIMS produce polycrystalline rutile TiO 2 grains, embedded in an amorphous matrix, despite no postannealing taking place. HiPIMS results in significantly larger grains, approaching 50\% of the film thickness at 700°C. In addition, the surface roughness of HiPIMS-grown films is below 1 nm rms in the temperature range 300-500°C which is an order of magnitude lower than that of dcMS-grown films. The results show that smooth, rutile TiO 2 films can be obtained by HiPIMS at relatively low growth temperatures, without postannealing.",

author = "F. Magnus and B. Agnarsson and Ingason, \{A. S.\} and K. Leosson and S. Olafsson and Gudmundsson, \{J. T.\}",

note = "Funding Information: This work was partially supported by the University of Iceland Research Fund, the Icelandic Research Fund grant no 072105003 and the Icelandic Research Fund Excellence Grant no 100019011.; 2011 MRS Spring Meeting ; Conference date: 25-04-2011 Through 29-04-2011",

year = "2012",

doi = "10.1557/opl.2011.1010",

language = "English",

isbn = "9781605113296",

series = "Materials Research Society Symposium Proceedings",

pages = "39--44",

booktitle = "Titanium Dioxide Nanomaterials",

}

Magnus, F, Agnarsson, B, Ingason, AS, Leosson, K, Olafsson, S & Gudmundsson, JT 2012, Growth of TiO ₂ thin films on Si(001) and SiO ₂ by reactive high power impulse magnetron sputtering. in Titanium Dioxide Nanomaterials. Materials Research Society Symposium Proceedings, vol. 1352, pp. 39-44, 2011 MRS Spring Meeting, San Francisco, CA, United States, 25/04/11. https://doi.org/10.1557/opl.2011.1010

TY - GEN

T1 - Growth of TiO 2 thin films on Si(001) and SiO 2 by reactive high power impulse magnetron sputtering

AU - Magnus, F.

AU - Agnarsson, B.

AU - Ingason, A. S.

AU - Leosson, K.

AU - Olafsson, S.

AU - Gudmundsson, J. T.

N1 - Funding Information: This work was partially supported by the University of Iceland Research Fund, the Icelandic Research Fund grant no 072105003 and the Icelandic Research Fund Excellence Grant no 100019011.

PY - 2012

Y1 - 2012

N2 - Thin TiO 2 films were grown on Si(001) and SiO 2 substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700°C. Both dcMS and HiPIMS produce polycrystalline rutile TiO 2 grains, embedded in an amorphous matrix, despite no postannealing taking place. HiPIMS results in significantly larger grains, approaching 50% of the film thickness at 700°C. In addition, the surface roughness of HiPIMS-grown films is below 1 nm rms in the temperature range 300-500°C which is an order of magnitude lower than that of dcMS-grown films. The results show that smooth, rutile TiO 2 films can be obtained by HiPIMS at relatively low growth temperatures, without postannealing.

AB - Thin TiO 2 films were grown on Si(001) and SiO 2 substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700°C. Both dcMS and HiPIMS produce polycrystalline rutile TiO 2 grains, embedded in an amorphous matrix, despite no postannealing taking place. HiPIMS results in significantly larger grains, approaching 50% of the film thickness at 700°C. In addition, the surface roughness of HiPIMS-grown films is below 1 nm rms in the temperature range 300-500°C which is an order of magnitude lower than that of dcMS-grown films. The results show that smooth, rutile TiO 2 films can be obtained by HiPIMS at relatively low growth temperatures, without postannealing.

UR - https://www.scopus.com/pages/publications/84455183113

U2 - 10.1557/opl.2011.1010

DO - 10.1557/opl.2011.1010

M3 - Conference contribution

SN - 9781605113296

T3 - Materials Research Society Symposium Proceedings

SP - 39

EP - 44

BT - Titanium Dioxide Nanomaterials

T2 - 2011 MRS Spring Meeting

Y2 - 25 April 2011 through 29 April 2011

ER -