@inproceedings{248d1bd7d04e44abac347529d9aaa265,
title = "High power-density 4H-SiC RF MOSFETs",
abstract = "We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm. To our knowledge this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs.",
keywords = "4H-SiC, High frequency, High power, RF MOSFET",
author = "G. Gudj{\'o}nsson and F. Allerstam and {\'O}lafsson, \{H. {\"O}\} and Nilsson, \{P. {\AA}\} and H. Hjelmgren and K. Andersson and Sveinbj{\"o}rnsson, \{E. {\"O}\} and H. Zirath and T. R{\"o}dle and R. Jos",
year = "2006",
doi = "10.4028/0-87849-425-1.1277",
language = "English",
isbn = "9780878494255",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 2",
pages = "1277--1280",
booktitle = "Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005",
address = "Switzerland",
edition = "PART 2",
note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",
}