@inproceedings{2325e43317d94d75869f89a2d89f0dba,
title = "Low density of near-interface traps at the Al2O3/4H-SiC interface with Al2O3 made by low temperature oxidation of Al",
abstract = "We report on a very low density (<5×1011 cm-2) of near-interface traps (NITs) at the Al2O3/4H-SiC interface estimated from capacitance-voltage (CV) analysis of MOS capacitors. The aluminum oxide (Al2O3) is grown by repeated deposition and subsequent low temperature (200 °C) oxidation for 5 min of thin (1-2 nm) Al layers using a hot plate. We refer to this simple method as hot plate Al2O3. It is observed that the density of NITs is significantly lower in the hot plate Al2O3 samples than in samples with Al2O3 grown by atomic layer deposition (ALD) at 300 °C and in reference samples with thermally grown silicon dioxide grown in O2 or N2O ambient.",
keywords = "Aluminum oxide, Gate dielectrics, Interface states, Near-interface traps",
author = "Khosa, \{Rabia Y.\} and Einar Sveinbjӧrnsson and Michael Winters and Hassan, \{Jawad Ul\} and Robin Karhu and Erik Janz{\'e}n and Niklas Rorsman",
note = "Publisher Copyright: {\textcopyright} 2017 Trans Tech Publications, Switzerland.; 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 ; Conference date: 25-09-2016 Through 29-09-2016",
year = "2017",
doi = "10.4028/www.scientific.net/MSF.897.135",
language = "English",
isbn = "9783035710434",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "135--138",
editor = "Konstantinos Zekentes and Vasilevskiy, \{Konstantin V.\} and Nikolaos Frangis",
booktitle = "Silicon Carbide and Related Materials 2016",
address = "Switzerland",
}