Low-frequency noise in AlGaN-based schottky barriers

D. Seghier; H. P. Gislason

doi:10.1063/1.1994169

Low-frequency noise in AlGaN-based schottky barriers

D. Seghier
, H. P. Gislason

Faculty of Physical Sciences

University of Iceland

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We studied the temperature dependence of the 1/f noise for Au/AlGaN Schottky diodes under forward bias, both as-grown and annealed. We ascribe the 1/f noise in the as-grown diode to mobility fluctuations in the depletion region. Annealing the junction increases the noise level due to activation of defects. We also show that there are local inhomogeneities in the Schottky barrier at the metal-semiconductor interface because of the high Al mole fraction which decreases the Schottky barrier.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	433-434
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994169
Publication status	Published - 30 Jun 2005
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: 26 Jul 2004 → 30 Jul 2004

Publication series

Name	AIP Conference Proceedings
Volume	772

Conference

Conference	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	26/07/04 → 30/07/04

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10.1063/1.1994169

Cite this

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title = "Low-frequency noise in AlGaN-based schottky barriers",

abstract = "We studied the temperature dependence of the 1/f noise for Au/AlGaN Schottky diodes under forward bias, both as-grown and annealed. We ascribe the 1/f noise in the as-grown diode to mobility fluctuations in the depletion region. Annealing the junction increases the noise level due to activation of defects. We also show that there are local inhomogeneities in the Schottky barrier at the metal-semiconductor interface because of the high Al mole fraction which decreases the Schottky barrier.",

author = "D. Seghier and Gislason, \{H. P.\}",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994169",

language = "English",

isbn = "0735402574",

series = "AIP Conference Proceedings",

pages = "433--434",

booktitle = "PHYSICS OF SEMICONDUCTORS",

note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

Seghier, D & Gislason, HP 2005, Low-frequency noise in AlGaN-based schottky barriers. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 433-434, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 26/07/04. https://doi.org/10.1063/1.1994169

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AU - Seghier, D.

AU - Gislason, H. P.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - We studied the temperature dependence of the 1/f noise for Au/AlGaN Schottky diodes under forward bias, both as-grown and annealed. We ascribe the 1/f noise in the as-grown diode to mobility fluctuations in the depletion region. Annealing the junction increases the noise level due to activation of defects. We also show that there are local inhomogeneities in the Schottky barrier at the metal-semiconductor interface because of the high Al mole fraction which decreases the Schottky barrier.

AB - We studied the temperature dependence of the 1/f noise for Au/AlGaN Schottky diodes under forward bias, both as-grown and annealed. We ascribe the 1/f noise in the as-grown diode to mobility fluctuations in the depletion region. Annealing the junction increases the noise level due to activation of defects. We also show that there are local inhomogeneities in the Schottky barrier at the metal-semiconductor interface because of the high Al mole fraction which decreases the Schottky barrier.

UR - https://www.scopus.com/pages/publications/33749507642

U2 - 10.1063/1.1994169

DO - 10.1063/1.1994169

M3 - Conference contribution

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 433

EP - 434

BT - PHYSICS OF SEMICONDUCTORS

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

Y2 - 26 July 2004 through 30 July 2004

ER -

Low-frequency noise in AlGaN-based schottky barriers

Abstract

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