Low temperature electrical performance of ultrathin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate materials

A. P. Jacob; T. Myrberg; M. Y.A. Yousif; O. Nur; M. Willander; P. Lundgren; E. Ö Sveinbjörnsson; M. Caymax

Low temperature electrical performance of ultrathin oxide MOS capacitors with p⁺ poly-Si_1-xGe_x and poly-Si gate materials

A. P. Jacob
, T. Myrberg
, M. Y.A. Yousif
, O. Nur
, M. Willander
, P. Lundgren
, E. Ö Sveinbjörnsson
, M. Caymax

Faculty of Physical Sciences

University of Iceland

Research output: Contribution to journal › Conference article › peer-review

Abstract

Low temperature electrical characterization of ultra thin oxide MOS capacitors with p⁺ poly-Si_1-xGe_x and poly-Si gate is performed. The investigated structures are suitable for future nano-scaled high speed MOSFET. The aim of this study is to compare the low temperature performance of poly-Si_1-xGe_x and poly-Si gate MOS structures in the nanoscale channel length regime. Apart from the significant change in the flat band voltage, the result shows that the accumulation capacitance of these MOS structures decreases with temperature. Though this is not significant, there is a consistency seen with respect to the temperature for poly-Si and poly-Si_1-xGe_x gated MOS capacitors. In addition the observed results are different from the metal gated MOS structures.

Original language	English
Pages (from-to)	668-671
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4746 I
Publication status	Published - 2002
Event	Physics of Semiconductor Devices - Delhi, India Duration: 11 Dec 2001 → 15 Dec 2001

Cite this

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title = "Low temperature electrical performance of ultrathin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate materials",

abstract = "Low temperature electrical characterization of ultra thin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate is performed. The investigated structures are suitable for future nano-scaled high speed MOSFET. The aim of this study is to compare the low temperature performance of poly-Si1-xGex and poly-Si gate MOS structures in the nanoscale channel length regime. Apart from the significant change in the flat band voltage, the result shows that the accumulation capacitance of these MOS structures decreases with temperature. Though this is not significant, there is a consistency seen with respect to the temperature for poly-Si and poly-Si1-xGex gated MOS capacitors. In addition the observed results are different from the metal gated MOS structures.",

author = "Jacob, \{A. P.\} and T. Myrberg and Yousif, \{M. Y.A.\} and O. Nur and M. Willander and P. Lundgren and Sveinbj{\"o}rnsson, \{E. {\"O}\} and M. Caymax",

year = "2002",

language = "English",

volume = "4746 I",

pages = "668--671",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Physics of Semiconductor Devices ; Conference date: 11-12-2001 Through 15-12-2001",

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TY - JOUR

T1 - Low temperature electrical performance of ultrathin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate materials

AU - Jacob, A. P.

AU - Myrberg, T.

AU - Yousif, M. Y.A.

AU - Nur, O.

AU - Willander, M.

AU - Lundgren, P.

AU - Sveinbjörnsson, E. Ö

AU - Caymax, M.

PY - 2002

Y1 - 2002

N2 - Low temperature electrical characterization of ultra thin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate is performed. The investigated structures are suitable for future nano-scaled high speed MOSFET. The aim of this study is to compare the low temperature performance of poly-Si1-xGex and poly-Si gate MOS structures in the nanoscale channel length regime. Apart from the significant change in the flat band voltage, the result shows that the accumulation capacitance of these MOS structures decreases with temperature. Though this is not significant, there is a consistency seen with respect to the temperature for poly-Si and poly-Si1-xGex gated MOS capacitors. In addition the observed results are different from the metal gated MOS structures.

AB - Low temperature electrical characterization of ultra thin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate is performed. The investigated structures are suitable for future nano-scaled high speed MOSFET. The aim of this study is to compare the low temperature performance of poly-Si1-xGex and poly-Si gate MOS structures in the nanoscale channel length regime. Apart from the significant change in the flat band voltage, the result shows that the accumulation capacitance of these MOS structures decreases with temperature. Though this is not significant, there is a consistency seen with respect to the temperature for poly-Si and poly-Si1-xGex gated MOS capacitors. In addition the observed results are different from the metal gated MOS structures.

UR - https://www.scopus.com/pages/publications/0036407409

M3 - Conference article

SN - 0277-786X

VL - 4746 I

SP - 668

EP - 671

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physics of Semiconductor Devices

Y2 - 11 December 2001 through 15 December 2001

ER -

Low temperature electrical performance of ultrathin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate materials

Abstract

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Low temperature electrical performance of ultrathin oxide MOS capacitors with p⁺ poly-Si_1-xGe_x and poly-Si gate materials