Magnetic field dependence of gate voltage and current in a GaAs-heterostructure in the quantum hall regime

D. Weiss; V. Mosser; V. Gudmundsson; R. R. Gerhardts; K. v. Klitzing

doi:10.1016/0038-1098(87)91118-5

Magnetic field dependence of gate voltage and current in a GaAs-heterostructure in the quantum hall regime

D. Weiss
, V. Mosser
, V. Gudmundsson
, R. R. Gerhardts
, K. v. Klitzing

Faculty of Physical Sciences

University of Iceland

Research output: Contribution to journal › Article › peer-review

Abstract

The current flow at a fixed gate voltage and the floating gate voltage for fixed charge density in a gated GaAs heterostructure have been measured as a function of the magnetic field. The voltage oscillations which reflect the behaviour of the chemical potential have been clearly resolved. The experimental results are explained by a statistical model of inhomogeneities in the carrier concentration implying an effective density of states between the Landau levels.

Original language	English
Pages (from-to)	89-91
Number of pages	3
Journal	Solid State Communications
Volume	62
Issue number	2
DOIs	https://doi.org/10.1016/0038-1098(87)91118-5
Publication status	Published - Apr 1987

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title = "Magnetic field dependence of gate voltage and current in a GaAs-heterostructure in the quantum hall regime",

abstract = "The current flow at a fixed gate voltage and the floating gate voltage for fixed charge density in a gated GaAs heterostructure have been measured as a function of the magnetic field. The voltage oscillations which reflect the behaviour of the chemical potential have been clearly resolved. The experimental results are explained by a statistical model of inhomogeneities in the carrier concentration implying an effective density of states between the Landau levels.",

author = "D. Weiss and V. Mosser and V. Gudmundsson and Gerhardts, \{R. R.\} and Klitzing, \{K. v.\}",

year = "1987",

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T1 - Magnetic field dependence of gate voltage and current in a GaAs-heterostructure in the quantum hall regime

AU - Weiss, D.

AU - Mosser, V.

AU - Gudmundsson, V.

AU - Gerhardts, R. R.

AU - Klitzing, K. v.

PY - 1987/4

Y1 - 1987/4

N2 - The current flow at a fixed gate voltage and the floating gate voltage for fixed charge density in a gated GaAs heterostructure have been measured as a function of the magnetic field. The voltage oscillations which reflect the behaviour of the chemical potential have been clearly resolved. The experimental results are explained by a statistical model of inhomogeneities in the carrier concentration implying an effective density of states between the Landau levels.

AB - The current flow at a fixed gate voltage and the floating gate voltage for fixed charge density in a gated GaAs heterostructure have been measured as a function of the magnetic field. The voltage oscillations which reflect the behaviour of the chemical potential have been clearly resolved. The experimental results are explained by a statistical model of inhomogeneities in the carrier concentration implying an effective density of states between the Landau levels.

UR - https://www.scopus.com/pages/publications/0023326072

U2 - 10.1016/0038-1098(87)91118-5

DO - 10.1016/0038-1098(87)91118-5

M3 - Article

SN - 0038-1098

VL - 62

SP - 89

EP - 91

JO - Solid State Communications

JF - Solid State Communications

IS - 2

ER -

Magnetic field dependence of gate voltage and current in a GaAs-heterostructure in the quantum hall regime

Abstract

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