Negative ion formation through dissociative electron attachment to the group IV tetrafluorides: Carbon tetrafluoride, silicon tetrafluoride and germanium tetrafluoride

E. H. Bjarnason; F. H. Ómarsson; M. Hoshino; H. Tanaka; M. J. Brunger; P. Limão-Vieira; O. Ingólfsson

doi:10.1016/j.ijms.2013.02.006

Negative ion formation through dissociative electron attachment to the group IV tetrafluorides: Carbon tetrafluoride, silicon tetrafluoride and germanium tetrafluoride

E. H. Bjarnason, F. H. Ómarsson, M. Hoshino, H. Tanaka, M. J. Brunger, P. Limão-Vieira, O. Ingólfsson

Faculty of Physical Sciences

University of Iceland

Research output: Contribution to journal › Article › peer-review

Abstract

Dissociative electron attachment (DEA) to the group IV tetrafluorides: CF₄, SiF₄ and GeF₄, is reported in the incident electron energy range from about 0 to 14 eV. The F₂^- formation from CF₄ is established and the appearance energies (AEs) for F^-, CF₃^- and F₂^- are determined using a three-point calibration for the energy scale. These are found to be 4.7 ± 0.1 eV, 4.5 ± 0.1 eV and 5.6 ± 0.1 eV, respectively. For SiF₄ the AEs for F^-, SiF ₃^- and F₂^-, through the dominating resonance are found to be 10.2 ± 0.1 eV, 10.2 ± 0.1 eV and 10.3 ± 0.1 eV, respectively. From GeF₄ the molecular ion GeF ₄^- and the fragments GeF₃^-, GeF ₂^-, GeF^- and F^- are all observed with appreciable intensities, and the F^- production is found to be significantly close to 0 eV incident electron energy. The present findings are compared with earlier experiments and discussed in context to the thermochemistry of the respective processes as well as the nature of the underlying resonances.

Original language	English
Pages (from-to)	45-53
Number of pages	9
Journal	International Journal of Mass Spectrometry
Volume	339-340
DOIs	https://doi.org/10.1016/j.ijms.2013.02.006
Publication status	Published - 1 Apr 2013

Bibliographical note

Funding Information: This work was conducted under the support of the Japanese Ministry of Education, Sport, Culture and Technology, the Australian Research Council through its Centers of Excellence Program, the Icelandic Centre for Research (RANNIS), and the University of Iceland Research Fund . PL-V acknowledges the PEst-OE/FIS/UI0068/2011 grant and his Visiting Professor position at Sophia University, Tokyo, Japan , and EHB and FHO acknowledge their PhD grants from the University of Iceland Research Fund and the Eimskip University Fund , respectively. We also thank Prof. G. Garcia and his research group for fruitful collaboration throughout the years.

Other keywords

Carbon tetrafluoride
Dissociative electron attachment
Germanium tetrafluoride
Silicon tetrafluoride

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10.1016/j.ijms.2013.02.006

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Bjarnason, E. H., Ómarsson, F. H., Hoshino, M., Tanaka, H., Brunger, M. J., Limão-Vieira, P., & Ingólfsson, O. (2013). Negative ion formation through dissociative electron attachment to the group IV tetrafluorides: Carbon tetrafluoride, silicon tetrafluoride and germanium tetrafluoride. International Journal of Mass Spectrometry, 339-340, 45-53. https://doi.org/10.1016/j.ijms.2013.02.006

@article{ca45270ce26e4053b870cb6c778bb374,

title = "Negative ion formation through dissociative electron attachment to the group IV tetrafluorides: Carbon tetrafluoride, silicon tetrafluoride and germanium tetrafluoride",

abstract = "Dissociative electron attachment (DEA) to the group IV tetrafluorides: CF4, SiF4 and GeF4, is reported in the incident electron energy range from about 0 to 14 eV. The F2- formation from CF4 is established and the appearance energies (AEs) for F-, CF3- and F2- are determined using a three-point calibration for the energy scale. These are found to be 4.7 ± 0.1 eV, 4.5 ± 0.1 eV and 5.6 ± 0.1 eV, respectively. For SiF4 the AEs for F-, SiF 3- and F2-, through the dominating resonance are found to be 10.2 ± 0.1 eV, 10.2 ± 0.1 eV and 10.3 ± 0.1 eV, respectively. From GeF4 the molecular ion GeF 4- and the fragments GeF3-, GeF 2-, GeF- and F- are all observed with appreciable intensities, and the F- production is found to be significantly close to 0 eV incident electron energy. The present findings are compared with earlier experiments and discussed in context to the thermochemistry of the respective processes as well as the nature of the underlying resonances.",

keywords = "Carbon tetrafluoride, Dissociative electron attachment, Germanium tetrafluoride, Silicon tetrafluoride",

author = "Bjarnason, \{E. H.\} and {\'O}marsson, \{F. H.\} and M. Hoshino and H. Tanaka and Brunger, \{M. J.\} and P. Lim{\~a}o-Vieira and O. Ing{\'o}lfsson",

note = "Funding Information: This work was conducted under the support of the Japanese Ministry of Education, Sport, Culture and Technology, the Australian Research Council through its Centers of Excellence Program, the Icelandic Centre for Research (RANNIS), and the University of Iceland Research Fund . PL-V acknowledges the PEst-OE/FIS/UI0068/2011 grant and his Visiting Professor position at Sophia University, Tokyo, Japan , and EHB and FHO acknowledge their PhD grants from the University of Iceland Research Fund and the Eimskip University Fund , respectively. We also thank Prof. G. Garcia and his research group for fruitful collaboration throughout the years.",

year = "2013",

month = apr,

day = "1",

doi = "10.1016/j.ijms.2013.02.006",

language = "English",

volume = "339-340",

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journal = "International Journal of Mass Spectrometry",

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Bjarnason, EH, Ómarsson, FH, Hoshino, M, Tanaka, H, Brunger, MJ, Limão-Vieira, P & Ingólfsson, O 2013, 'Negative ion formation through dissociative electron attachment to the group IV tetrafluorides: Carbon tetrafluoride, silicon tetrafluoride and germanium tetrafluoride', International Journal of Mass Spectrometry, vol. 339-340, pp. 45-53. https://doi.org/10.1016/j.ijms.2013.02.006

Negative ion formation through dissociative electron attachment to the group IV tetrafluorides: Carbon tetrafluoride, silicon tetrafluoride and germanium tetrafluoride. / Bjarnason, E. H.; Ómarsson, F. H.; Hoshino, M. et al.
In: International Journal of Mass Spectrometry, Vol. 339-340, 01.04.2013, p. 45-53.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Negative ion formation through dissociative electron attachment to the group IV tetrafluorides

T2 - Carbon tetrafluoride, silicon tetrafluoride and germanium tetrafluoride

AU - Bjarnason, E. H.

AU - Ómarsson, F. H.

AU - Hoshino, M.

AU - Tanaka, H.

AU - Brunger, M. J.

AU - Limão-Vieira, P.

AU - Ingólfsson, O.

N1 - Funding Information: This work was conducted under the support of the Japanese Ministry of Education, Sport, Culture and Technology, the Australian Research Council through its Centers of Excellence Program, the Icelandic Centre for Research (RANNIS), and the University of Iceland Research Fund . PL-V acknowledges the PEst-OE/FIS/UI0068/2011 grant and his Visiting Professor position at Sophia University, Tokyo, Japan , and EHB and FHO acknowledge their PhD grants from the University of Iceland Research Fund and the Eimskip University Fund , respectively. We also thank Prof. G. Garcia and his research group for fruitful collaboration throughout the years.

PY - 2013/4/1

Y1 - 2013/4/1

N2 - Dissociative electron attachment (DEA) to the group IV tetrafluorides: CF4, SiF4 and GeF4, is reported in the incident electron energy range from about 0 to 14 eV. The F2- formation from CF4 is established and the appearance energies (AEs) for F-, CF3- and F2- are determined using a three-point calibration for the energy scale. These are found to be 4.7 ± 0.1 eV, 4.5 ± 0.1 eV and 5.6 ± 0.1 eV, respectively. For SiF4 the AEs for F-, SiF 3- and F2-, through the dominating resonance are found to be 10.2 ± 0.1 eV, 10.2 ± 0.1 eV and 10.3 ± 0.1 eV, respectively. From GeF4 the molecular ion GeF 4- and the fragments GeF3-, GeF 2-, GeF- and F- are all observed with appreciable intensities, and the F- production is found to be significantly close to 0 eV incident electron energy. The present findings are compared with earlier experiments and discussed in context to the thermochemistry of the respective processes as well as the nature of the underlying resonances.

AB - Dissociative electron attachment (DEA) to the group IV tetrafluorides: CF4, SiF4 and GeF4, is reported in the incident electron energy range from about 0 to 14 eV. The F2- formation from CF4 is established and the appearance energies (AEs) for F-, CF3- and F2- are determined using a three-point calibration for the energy scale. These are found to be 4.7 ± 0.1 eV, 4.5 ± 0.1 eV and 5.6 ± 0.1 eV, respectively. For SiF4 the AEs for F-, SiF 3- and F2-, through the dominating resonance are found to be 10.2 ± 0.1 eV, 10.2 ± 0.1 eV and 10.3 ± 0.1 eV, respectively. From GeF4 the molecular ion GeF 4- and the fragments GeF3-, GeF 2-, GeF- and F- are all observed with appreciable intensities, and the F- production is found to be significantly close to 0 eV incident electron energy. The present findings are compared with earlier experiments and discussed in context to the thermochemistry of the respective processes as well as the nature of the underlying resonances.

KW - Carbon tetrafluoride

KW - Dissociative electron attachment

KW - Germanium tetrafluoride

KW - Silicon tetrafluoride

UR - https://www.scopus.com/pages/publications/84875420449

U2 - 10.1016/j.ijms.2013.02.006

DO - 10.1016/j.ijms.2013.02.006

M3 - Article

SN - 1387-3806

VL - 339-340

SP - 45

EP - 53

JO - International Journal of Mass Spectrometry

JF - International Journal of Mass Spectrometry

ER -

Negative ion formation through dissociative electron attachment to the group IV tetrafluorides: Carbon tetrafluoride, silicon tetrafluoride and germanium tetrafluoride

Abstract

Bibliographical note

Other keywords

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