TY - JOUR
T1 - Negative ion formation through dissociative electron attachment to the group IV tetrafluorides
T2 - Carbon tetrafluoride, silicon tetrafluoride and germanium tetrafluoride
AU - Bjarnason, E. H.
AU - Ómarsson, F. H.
AU - Hoshino, M.
AU - Tanaka, H.
AU - Brunger, M. J.
AU - Limão-Vieira, P.
AU - Ingólfsson, O.
N1 - Funding Information: This work was conducted under the support of the Japanese Ministry of Education, Sport, Culture and Technology, the Australian Research Council through its Centers of Excellence Program, the Icelandic Centre for Research (RANNIS), and the University of Iceland Research Fund . PL-V acknowledges the PEst-OE/FIS/UI0068/2011 grant and his Visiting Professor position at Sophia University, Tokyo, Japan , and EHB and FHO acknowledge their PhD grants from the University of Iceland Research Fund and the Eimskip University Fund , respectively. We also thank Prof. G. Garcia and his research group for fruitful collaboration throughout the years.
PY - 2013/4/1
Y1 - 2013/4/1
N2 - Dissociative electron attachment (DEA) to the group IV tetrafluorides: CF4, SiF4 and GeF4, is reported in the incident electron energy range from about 0 to 14 eV. The F2- formation from CF4 is established and the appearance energies (AEs) for F-, CF3- and F2- are determined using a three-point calibration for the energy scale. These are found to be 4.7 ± 0.1 eV, 4.5 ± 0.1 eV and 5.6 ± 0.1 eV, respectively. For SiF4 the AEs for F-, SiF 3- and F2-, through the dominating resonance are found to be 10.2 ± 0.1 eV, 10.2 ± 0.1 eV and 10.3 ± 0.1 eV, respectively. From GeF4 the molecular ion GeF 4- and the fragments GeF3-, GeF 2-, GeF- and F- are all observed with appreciable intensities, and the F- production is found to be significantly close to 0 eV incident electron energy. The present findings are compared with earlier experiments and discussed in context to the thermochemistry of the respective processes as well as the nature of the underlying resonances.
AB - Dissociative electron attachment (DEA) to the group IV tetrafluorides: CF4, SiF4 and GeF4, is reported in the incident electron energy range from about 0 to 14 eV. The F2- formation from CF4 is established and the appearance energies (AEs) for F-, CF3- and F2- are determined using a three-point calibration for the energy scale. These are found to be 4.7 ± 0.1 eV, 4.5 ± 0.1 eV and 5.6 ± 0.1 eV, respectively. For SiF4 the AEs for F-, SiF 3- and F2-, through the dominating resonance are found to be 10.2 ± 0.1 eV, 10.2 ± 0.1 eV and 10.3 ± 0.1 eV, respectively. From GeF4 the molecular ion GeF 4- and the fragments GeF3-, GeF 2-, GeF- and F- are all observed with appreciable intensities, and the F- production is found to be significantly close to 0 eV incident electron energy. The present findings are compared with earlier experiments and discussed in context to the thermochemistry of the respective processes as well as the nature of the underlying resonances.
KW - Carbon tetrafluoride
KW - Dissociative electron attachment
KW - Germanium tetrafluoride
KW - Silicon tetrafluoride
UR - https://www.scopus.com/pages/publications/84875420449
U2 - 10.1016/j.ijms.2013.02.006
DO - 10.1016/j.ijms.2013.02.006
M3 - Article
SN - 1387-3806
VL - 339-340
SP - 45
EP - 53
JO - International Journal of Mass Spectrometry
JF - International Journal of Mass Spectrometry
ER -