Noise spectroscopy of metastable deep level centers in Mg-doped GaN

D. Seghier; H. P. Gislason

doi:10.1016/j.physb.2003.09.062

Noise spectroscopy of metastable deep level centers in Mg-doped GaN

D. Seghier, H. P. Gislason

Faculty of Physical Sciences

University of Iceland

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present results from noise spectroscopy performed on p-type GaN:Mg samples. In addition to the 1/f noise, significant generation-recombination noise is observed and shown to be linked to metastable DX-like centers. We correlate these centers with metastable defects with optical ionization energies 1.1 and 1.9 eV, respectively, reported in a previous work. The energy barriers for capture into and emission from the fundamental state are quantitatively determined. We propose a model for the configuration coordinate diagram that explains the PPC in GaN:Mg in the light of our results obtained from noise spectroscopy.

Original language	English
Pages (from-to)	381-384
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.062
Publication status	Published - 31 Dec 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 28 Jul 2003 → 1 Aug 2003

Bibliographical note

Funding Information: This research was supported by the Icelandic Research Council and University of Iceland.

Other keywords

GaN
Metastable defects
Noise

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10.1016/j.physb.2003.09.062

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@article{aec57bb716114c11b41f0b543eb848dc,

title = "Noise spectroscopy of metastable deep level centers in Mg-doped GaN",

abstract = "We present results from noise spectroscopy performed on p-type GaN:Mg samples. In addition to the 1/f noise, significant generation-recombination noise is observed and shown to be linked to metastable DX-like centers. We correlate these centers with metastable defects with optical ionization energies 1.1 and 1.9 eV, respectively, reported in a previous work. The energy barriers for capture into and emission from the fundamental state are quantitatively determined. We propose a model for the configuration coordinate diagram that explains the PPC in GaN:Mg in the light of our results obtained from noise spectroscopy.",

keywords = "GaN, Metastable defects, Noise",

author = "D. Seghier and Gislason, \{H. P.\}",

note = "Funding Information: This research was supported by the Icelandic Research Council and University of Iceland.; Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.062",

language = "English",

volume = "340-342",

pages = "381--384",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Noise spectroscopy of metastable deep level centers in Mg-doped GaN

AU - Seghier, D.

AU - Gislason, H. P.

N1 - Funding Information: This research was supported by the Icelandic Research Council and University of Iceland.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - We present results from noise spectroscopy performed on p-type GaN:Mg samples. In addition to the 1/f noise, significant generation-recombination noise is observed and shown to be linked to metastable DX-like centers. We correlate these centers with metastable defects with optical ionization energies 1.1 and 1.9 eV, respectively, reported in a previous work. The energy barriers for capture into and emission from the fundamental state are quantitatively determined. We propose a model for the configuration coordinate diagram that explains the PPC in GaN:Mg in the light of our results obtained from noise spectroscopy.

AB - We present results from noise spectroscopy performed on p-type GaN:Mg samples. In addition to the 1/f noise, significant generation-recombination noise is observed and shown to be linked to metastable DX-like centers. We correlate these centers with metastable defects with optical ionization energies 1.1 and 1.9 eV, respectively, reported in a previous work. The energy barriers for capture into and emission from the fundamental state are quantitatively determined. We propose a model for the configuration coordinate diagram that explains the PPC in GaN:Mg in the light of our results obtained from noise spectroscopy.

KW - GaN

KW - Metastable defects

KW - Noise

UR - https://www.scopus.com/pages/publications/0347764777

U2 - 10.1016/j.physb.2003.09.062

DO - 10.1016/j.physb.2003.09.062

M3 - Conference article

SN - 0921-4526

VL - 340-342

SP - 381

EP - 384

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Noise spectroscopy of metastable deep level centers in Mg-doped GaN

Abstract

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