Oxidation induced ON1, ON2a/b defects in 4h-sic characterized by DLTS

D. Booker; H. Abdalla; L. Lilja; J. Hassan; J. P. Bergman; E. Ö Sveinbjörnsson; E. Janzén

doi:10.4028/www.scientific.net/MSF.778-780.281

Oxidation induced ON₁, ON_2a/b defects in 4h-sic characterized by DLTS

D. Booker
, H. Abdalla
, L. Lilja
, J. Hassan
, J. P. Bergman
, E. Ö Sveinbjörnsson
, E. Janzén

Faculty of Physical Sciences

University of Iceland

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The deep levels ON₁ and ON_2a/b introduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON_2a/b defect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4) and apparent energy level, apparent electron capture cross section and filling pulse measurement derived capture cross sections are given.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2013
Editors	Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
Publisher	Trans Tech Publications Ltd
Pages	281-284
Number of pages	4
ISBN (Print)	9783038350101
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.778-780.281
Publication status	Published - 2014
Event	15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan Duration: 29 Sept 2013 → 4 Oct 2013

Publication series

Name	Materials Science Forum
Volume	778-780

Conference

Conference	15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Country/Territory	Japan
City	Miyazaki
Period	29/09/13 → 4/10/13

Other keywords

4H-SiC
Capture cross section
Carrier lifetime
DLTS
Deep level
Defect
Oxidation
Trap

Access to Document

10.4028/www.scientific.net/MSF.778-780.281

Cite this

Booker, D., Abdalla, H., Lilja, L., Hassan, J., Bergman, J. P., Sveinbjörnsson, E. Ö., & Janzén, E. (2014). Oxidation induced ON₁, ON_2a/b defects in 4h-sic characterized by DLTS. In H. Okumura, H. Harima, T. Kimoto, M. Yoshimoto, H. Watanabe, T. Hatayama, H. Matsuura, Y. Sano, & T. Funaki (Eds.), Silicon Carbide and Related Materials 2013 (pp. 281-284). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.281

Booker, D. ; Abdalla, H. ; Lilja, L. et al. / Oxidation induced ON₁, ON_2a/b defects in 4h-sic characterized by DLTS. Silicon Carbide and Related Materials 2013. editor / Hajime Okumura ; Hiroshi Harima ; Tsunenobu Kimoto ; Masahiro Yoshimoto ; Heiji Watanabe ; Tomoaki Hatayama ; Hideharu Matsuura ; Yasuhisa Sano ; Tsuyoshi Funaki. Trans Tech Publications Ltd, 2014. pp. 281-284 (Materials Science Forum).

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title = "Oxidation induced ON1, ON2a/b defects in 4h-sic characterized by DLTS",

abstract = "The deep levels ON1 and ON2a/b introduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON2a/b defect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4) and apparent energy level, apparent electron capture cross section and filling pulse measurement derived capture cross sections are given.",

keywords = "4H-SiC, Capture cross section, Carrier lifetime, DLTS, Deep level, Defect, Oxidation, Trap",

author = "D. Booker and H. Abdalla and L. Lilja and J. Hassan and Bergman, \{J. P.\} and Sveinbj{\"o}rnsson, \{E. {\"O}\} and E. Janz{\'e}n",

year = "2014",

doi = "10.4028/www.scientific.net/MSF.778-780.281",

language = "English",

isbn = "9783038350101",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "281--284",

editor = "Hajime Okumura and Hiroshi Harima and Tsunenobu Kimoto and Masahiro Yoshimoto and Heiji Watanabe and Tomoaki Hatayama and Hideharu Matsuura and Yasuhisa Sano and Tsuyoshi Funaki",

booktitle = "Silicon Carbide and Related Materials 2013",

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note = "15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 ; Conference date: 29-09-2013 Through 04-10-2013",

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Booker, D, Abdalla, H, Lilja, L, Hassan, J, Bergman, JP, Sveinbjörnsson, EÖ & Janzén, E 2014, Oxidation induced ON₁, ON_2a/b defects in 4h-sic characterized by DLTS. in H Okumura, H Harima, T Kimoto, M Yoshimoto, H Watanabe, T Hatayama, H Matsuura, Y Sano & T Funaki (eds), Silicon Carbide and Related Materials 2013. Materials Science Forum, vol. 778-780, Trans Tech Publications Ltd, pp. 281-284, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, Japan, 29/09/13. https://doi.org/10.4028/www.scientific.net/MSF.778-780.281

Oxidation induced ON₁, ON_2a/b defects in 4h-sic characterized by DLTS. / Booker, D.; Abdalla, H.; Lilja, L. et al.
Silicon Carbide and Related Materials 2013. ed. / Hajime Okumura; Hiroshi Harima; Tsunenobu Kimoto; Masahiro Yoshimoto; Heiji Watanabe; Tomoaki Hatayama; Hideharu Matsuura; Yasuhisa Sano; Tsuyoshi Funaki. Trans Tech Publications Ltd, 2014. p. 281-284 (Materials Science Forum; Vol. 778-780).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Booker, D.

AU - Abdalla, H.

AU - Lilja, L.

AU - Hassan, J.

AU - Bergman, J. P.

AU - Sveinbjörnsson, E. Ö

AU - Janzén, E.

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AB - The deep levels ON1 and ON2a/b introduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON2a/b defect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4) and apparent energy level, apparent electron capture cross section and filling pulse measurement derived capture cross sections are given.

KW - 4H-SiC

KW - Capture cross section

KW - Carrier lifetime

KW - DLTS

KW - Deep level

KW - Defect

KW - Oxidation

KW - Trap

UR - https://www.scopus.com/pages/publications/84896076634

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DO - 10.4028/www.scientific.net/MSF.778-780.281

M3 - Conference contribution

SN - 9783038350101

T3 - Materials Science Forum

SP - 281

EP - 284

BT - Silicon Carbide and Related Materials 2013

A2 - Okumura, Hajime

A2 - Harima, Hiroshi

A2 - Kimoto, Tsunenobu

A2 - Yoshimoto, Masahiro

A2 - Watanabe, Heiji

A2 - Hatayama, Tomoaki

A2 - Matsuura, Hideharu

A2 - Sano, Yasuhisa

A2 - Funaki, Tsuyoshi

PB - Trans Tech Publications Ltd

T2 - 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013

Y2 - 29 September 2013 through 4 October 2013

ER -

Booker D, Abdalla H, Lilja L, Hassan J, Bergman JP, Sveinbjörnsson EÖ et al. Oxidation induced ON₁, ON_2a/b defects in 4h-sic characterized by DLTS. In Okumura H, Harima H, Kimoto T, Yoshimoto M, Watanabe H, Hatayama T, Matsuura H, Sano Y, Funaki T, editors, Silicon Carbide and Related Materials 2013. Trans Tech Publications Ltd. 2014. p. 281-284. (Materials Science Forum). doi: 10.4028/www.scientific.net/MSF.778-780.281