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Quantum interference and conductance in silicon quantum wires

  • Nikolai T. Bagraev
  • , Wolfgang Gehlhoff
  • , Vadim K. Ivanov
  • , Leonid E. Klyachkin
  • , Anna M. Malyarenko
  • , Alexander Naeser
  • , Serguei A. Rykov
  • , Ivan A. Shelykh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present the findings of quantized conductance (QC), Coulomb staircase (CS) and local tunneling spectroscopy (LTS) techniques which reveal the single-hole confinement and charging phenomena in the smooth and modulated quantum wires created electrostatically inside self-assembly longitudinal (SLQW) and lateral (SLaQW) silicon quantum wells. The current-voltage (CV) characteristics obtained are in a good agreement with the data of the theoretical calculations taking account of quantum interference effects in the field-dependent value of the transmission coefficient through the quantum wires that exhibit the different degree of a modulation.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages112-121
Number of pages10
ISBN (Print)0819431613, 9780819431615
DOIs
Publication statusPublished - 1999
EventProceedings of the 1998 Internal Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, NDTCS-98 - St. Petersburg, Russia
Duration: 8 Jun 199812 Jun 1998

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume3687

Conference

ConferenceProceedings of the 1998 Internal Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, NDTCS-98
CitySt. Petersburg, Russia
Period8/06/9812/06/98

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