Quantum interference and conductance in silicon quantum wires

Nikolai T. Bagraev, Wolfgang Gehlhoff, Vadim K. Ivanov, Leonid E. Klyachkin, Anna M. Malyarenko, Alexander Naeser, Serguei A. Rykov, Ivan A. Shelykh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present the findings of quantized conductance (QC), Coulomb staircase (CS) and local tunneling spectroscopy (LTS) techniques which reveal the single-hole confinement and charging phenomena in the smooth and modulated quantum wires created electrostatically inside self-assembly longitudinal (SLQW) and lateral (SLaQW) silicon quantum wells. The current-voltage (CV) characteristics obtained are in a good agreement with the data of the theoretical calculations taking account of quantum interference effects in the field-dependent value of the transmission coefficient through the quantum wires that exhibit the different degree of a modulation.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages112-121
Number of pages10
ISBN (Print)0819431613, 9780819431615
DOIs
Publication statusPublished - 1999
EventProceedings of the 1998 Internal Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, NDTCS-98 - St. Petersburg, Russia
Duration: 8 Jun 199812 Jun 1998

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume3687

Conference

ConferenceProceedings of the 1998 Internal Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, NDTCS-98
CitySt. Petersburg, Russia
Period8/06/9812/06/98

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