Room-temperature electroluminescence from dislocations in silicon

E. Ö Sveinbjörnsson; J. Weber

doi:10.1016/S0040-6090(96)09226-7

Room-temperature electroluminescence from dislocations in silicon

E. Ö Sveinbjörnsson, J. Weber

Faculty of Physical Sciences

University of Iceland

Research output: Contribution to journal › Article › peer-review

Abstract

We report on electroluminescence at room temperature from n⁺-p silicon diodes containing high densities (10⁸-10⁹ cm^-2) of dislocations at the junction interface. In addition to the electroluminescence (EL) from band-to-band transitions we observe a signal with a comparable intensity peaked at ∼1.6 μm (0.78 eV). From studies of the luminescence below room temperature, we deduce that the 1.6 μm emission originates from the well known dislocation-related center D1. The D1 electroluminescence intensity at 300 K increases linearly with current density with no observable saturation. The external quantum efficiency of the D1 electroluminescence at room temperature was estimated to be of the order of 10^-7.

Original language	English
Pages (from-to)	201-203
Number of pages	3
Journal	Thin Solid Films
Volume	294
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(96)09226-7
Publication status	Published - 15 Feb 1997

Bibliographical note

Funding Information: We thank H.J. Queisser for his interest and support of this work and W. Heinz and W. Krause for technical assistance. We thank B. Winter and R. Brendel for phosphorus diffusions. Part of this work was financially supported by Chalmers University of Technology, Göteborg, Sweden.

Other keywords

Dislocations
Electroluminescence

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10.1016/S0040-6090(96)09226-7

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title = "Room-temperature electroluminescence from dislocations in silicon",

abstract = "We report on electroluminescence at room temperature from n+-p silicon diodes containing high densities (108-109 cm-2) of dislocations at the junction interface. In addition to the electroluminescence (EL) from band-to-band transitions we observe a signal with a comparable intensity peaked at ∼1.6 μm (0.78 eV). From studies of the luminescence below room temperature, we deduce that the 1.6 μm emission originates from the well known dislocation-related center D1. The D1 electroluminescence intensity at 300 K increases linearly with current density with no observable saturation. The external quantum efficiency of the D1 electroluminescence at room temperature was estimated to be of the order of 10-7.",

keywords = "Dislocations, Electroluminescence",

author = "Sveinbj{\"o}rnsson, \{E. {\"O}\} and J. Weber",

note = "Funding Information: We thank H.J. Queisser for his interest and support of this work and W. Heinz and W. Krause for technical assistance. We thank B. Winter and R. Brendel for phosphorus diffusions. Part of this work was financially supported by Chalmers University of Technology, G{\"o}teborg, Sweden.",

year = "1997",

month = feb,

day = "15",

doi = "10.1016/S0040-6090(96)09226-7",

language = "English",

volume = "294",

pages = "201--203",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

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TY - JOUR

T1 - Room-temperature electroluminescence from dislocations in silicon

AU - Sveinbjörnsson, E. Ö

AU - Weber, J.

N1 - Funding Information: We thank H.J. Queisser for his interest and support of this work and W. Heinz and W. Krause for technical assistance. We thank B. Winter and R. Brendel for phosphorus diffusions. Part of this work was financially supported by Chalmers University of Technology, Göteborg, Sweden.

PY - 1997/2/15

Y1 - 1997/2/15

N2 - We report on electroluminescence at room temperature from n+-p silicon diodes containing high densities (108-109 cm-2) of dislocations at the junction interface. In addition to the electroluminescence (EL) from band-to-band transitions we observe a signal with a comparable intensity peaked at ∼1.6 μm (0.78 eV). From studies of the luminescence below room temperature, we deduce that the 1.6 μm emission originates from the well known dislocation-related center D1. The D1 electroluminescence intensity at 300 K increases linearly with current density with no observable saturation. The external quantum efficiency of the D1 electroluminescence at room temperature was estimated to be of the order of 10-7.

AB - We report on electroluminescence at room temperature from n+-p silicon diodes containing high densities (108-109 cm-2) of dislocations at the junction interface. In addition to the electroluminescence (EL) from band-to-band transitions we observe a signal with a comparable intensity peaked at ∼1.6 μm (0.78 eV). From studies of the luminescence below room temperature, we deduce that the 1.6 μm emission originates from the well known dislocation-related center D1. The D1 electroluminescence intensity at 300 K increases linearly with current density with no observable saturation. The external quantum efficiency of the D1 electroluminescence at room temperature was estimated to be of the order of 10-7.

KW - Dislocations

KW - Electroluminescence

UR - https://www.scopus.com/pages/publications/0031074335

U2 - 10.1016/S0040-6090(96)09226-7

DO - 10.1016/S0040-6090(96)09226-7

M3 - Article

SN - 0040-6090

VL - 294

SP - 201

EP - 203

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Room-temperature electroluminescence from dislocations in silicon

Abstract

Bibliographical note

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