@inproceedings{7733bb829d2d4080bc67dec254bb6265,
title = "Sodium enhanced oxidation of Si-face 4H-SiC: A method to remove near interface traps",
abstract = "We demonstrate how sodium enhanced oxidation of Si face 4H-SiC results in removal of near-interface traps at the SiO2/4H-SiC interface. These detrimental traps have energy levels close to the SiC conduction band edge and are responsible for low electron inversion channel mobilities (1-10 cm 2/Vs) in Si face 4H-SiC metal-oxide-semiconductor field effect transistors. The presence of sodium during oxidation increases the oxidation rate and suppresses formation of these nearinterface traps resulting in high inversion channel mobility of 150 cm2/Vs in such transistors. Sodium can be incorporated by using carrier boats made of sintered alumina during oxidation or by deliberate sodium contamination of the oxide during formation of the SiC/SiO2 interface.",
keywords = "Interface states, Near-interface traps, Oxidation rate, Sodium",
author = "Sveinbj{\"o}rnsson, \{E. {\"O}\} and F. Allerstam and {\'O}lafsson, \{H. {\"O}\} and G. Gudj{\'o}nsson and D. Dochev and T. R{\"o}dle and R. Jos",
year = "2007",
doi = "10.4028/0-87849-442-1.487",
language = "English",
isbn = "0878494421",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "487--492",
editor = "N. Wright and C.M. Johnson and K. Vassilevski and I. Nikitina and A. Horsfall",
booktitle = "Silicon Carbide and Related Materials 2006 - ECSCRM 20006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials",
address = "Switzerland",
note = "6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006 ; Conference date: 03-09-2006 Through 07-09-2007",
}