Spin ballistic transport and conductance characteristics in p-type narrow-channel semiconductor devices

The effects of bulk inversion asymmetry and spin–orbit interactions on the energy bands and conductance structures in a p-type semiconductor device with a DC single top gate are examined. To facilitate the analysis, the conductance structure is altered by adjusting the gate potential energy and the Dresselhaus parameter. It is shown that when the gate potential energy is positive, an electron-like quasi-bound state (E-QBS) forms at the top of the lower energy band branch. Conversely, when the potential energy is negative, a hole-like quasi-bound state (H-QBS) appears at the bottom of the upper energy band branch. As the potential energy increases, the positions of the QBS structures shift towards the energy gap. Furthermore, as the Dresselhaus effect intensifies, the structures of the energy bands and conductance undergo pronounced changes, particularly in the heavy hole energy band.