Spin interference of holes in silicon one-dimensional rings

Nikolay T. Bagraev; Nikolay G. Galkin; Wolfgang Gehlhoff; Leonid E. Klyachkin; Anna M. Malyarenko; Ivan A. Shelykh

doi:10.1016/j.physe.2007.08.079

Spin interference of holes in silicon one-dimensional rings

Nikolay T. Bagraev
, Nikolay G. Galkin
, Wolfgang Gehlhoff
, Leonid E. Klyachkin
, Anna M. Malyarenko
, Ivan A. Shelykh

Faculty of Physical Sciences

University of Iceland

Research output: Contribution to journal › Article › peer-review

Abstract

We present the findings of the spin interference effect revealed by the quantum point contact inserted within one of the arms of the Rashba gate-controlled ring that is embedded in the p-type self-assembled silicon quantum well prepared on the n-type Si (1 0 0) surface. The amplitude and phase sensitivity of the "0.7 (2e²/h)" feature of the hole quantum conductance staircase are studied by varying the value of the top gate voltage and revealed by the Aharonov-Casher (AC) conductance oscillations. Besides, the variations of the "0.7 (2e²/h)" feature caused by the Rashba spin-orbit interaction (SOI) are found to take in the fractional form with both the plateaux and steps as a function of the top gate voltage.

Original language	English
Pages (from-to)	1338-1340
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	5
DOIs	https://doi.org/10.1016/j.physe.2007.08.079
Publication status	Published - Mar 2008

Other keywords

Aharonov-Bohm ring
Silicon quantum well
Spin interference
Spin-orbit interaction

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10.1016/j.physe.2007.08.079

Cite this

@article{46388e1bd10241f69f47c16f1e32891f,

title = "Spin interference of holes in silicon one-dimensional rings",

abstract = "We present the findings of the spin interference effect revealed by the quantum point contact inserted within one of the arms of the Rashba gate-controlled ring that is embedded in the p-type self-assembled silicon quantum well prepared on the n-type Si (1 0 0) surface. The amplitude and phase sensitivity of the {"}0.7 (2e2/h){"} feature of the hole quantum conductance staircase are studied by varying the value of the top gate voltage and revealed by the Aharonov-Casher (AC) conductance oscillations. Besides, the variations of the {"}0.7 (2e2/h){"} feature caused by the Rashba spin-orbit interaction (SOI) are found to take in the fractional form with both the plateaux and steps as a function of the top gate voltage.",

keywords = "Aharonov-Bohm ring, Silicon quantum well, Spin interference, Spin-orbit interaction",

author = "Bagraev, \{Nikolay T.\} and Galkin, \{Nikolay G.\} and Wolfgang Gehlhoff and Klyachkin, \{Leonid E.\} and Malyarenko, \{Anna M.\} and Shelykh, \{Ivan A.\}",

note = "Funding Information: The work was supported by the programma of SNSF (Grant IB7320-110970/1).",

year = "2008",

month = mar,

doi = "10.1016/j.physe.2007.08.079",

language = "English",

volume = "40",

pages = "1338--1340",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "5",

}

TY - JOUR

T1 - Spin interference of holes in silicon one-dimensional rings

AU - Bagraev, Nikolay T.

AU - Galkin, Nikolay G.

AU - Gehlhoff, Wolfgang

AU - Klyachkin, Leonid E.

AU - Malyarenko, Anna M.

AU - Shelykh, Ivan A.

N1 - Funding Information: The work was supported by the programma of SNSF (Grant IB7320-110970/1).

PY - 2008/3

Y1 - 2008/3

N2 - We present the findings of the spin interference effect revealed by the quantum point contact inserted within one of the arms of the Rashba gate-controlled ring that is embedded in the p-type self-assembled silicon quantum well prepared on the n-type Si (1 0 0) surface. The amplitude and phase sensitivity of the "0.7 (2e2/h)" feature of the hole quantum conductance staircase are studied by varying the value of the top gate voltage and revealed by the Aharonov-Casher (AC) conductance oscillations. Besides, the variations of the "0.7 (2e2/h)" feature caused by the Rashba spin-orbit interaction (SOI) are found to take in the fractional form with both the plateaux and steps as a function of the top gate voltage.

AB - We present the findings of the spin interference effect revealed by the quantum point contact inserted within one of the arms of the Rashba gate-controlled ring that is embedded in the p-type self-assembled silicon quantum well prepared on the n-type Si (1 0 0) surface. The amplitude and phase sensitivity of the "0.7 (2e2/h)" feature of the hole quantum conductance staircase are studied by varying the value of the top gate voltage and revealed by the Aharonov-Casher (AC) conductance oscillations. Besides, the variations of the "0.7 (2e2/h)" feature caused by the Rashba spin-orbit interaction (SOI) are found to take in the fractional form with both the plateaux and steps as a function of the top gate voltage.

KW - Aharonov-Bohm ring

KW - Silicon quantum well

KW - Spin interference

KW - Spin-orbit interaction

UR - https://www.scopus.com/pages/publications/39649087342

U2 - 10.1016/j.physe.2007.08.079

DO - 10.1016/j.physe.2007.08.079

M3 - Article

SN - 1386-9477

VL - 40

SP - 1338

EP - 1340

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 5

ER -

Spin interference of holes in silicon one-dimensional rings

Abstract

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