Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO

T. E. Mølholt, R. Mantovan, H. P. Gunnlaugsson, K. Bharuth-Ram, M. Fanciulli, H. P. Gíslason, K. Johnston, Y. Kobayashi, G. Langouche, H. Masenda, D. Naidoo, S. Ólafsson, R. Sielemann, G. Weyer

Research output: Contribution to journalArticlepeer-review

Abstract

57Fe Mössbauer spectroscopy following ion implantation of radioactive 57Mn+ ( T1/2=85.4 s) has been applied to study the formation of Fe/Mn implantation-induced defects in ZnO at temperatures between 319 and 390 K. The formation of ferric iron-vacancy complexes is found to depend strongly on the implanted dose and to be faster and more efficient at higher temperatures. The results at these temperatures suggest the mobility of the Zn vacancy, together with vacancy trapping at the substitutional Mn/Fe impurities are responsible for the formation of Fe-VZn complexes.

Original languageEnglish
Pages (from-to)4820-4822
Number of pages3
JournalPhysica B: Condensed Matter
Volume404
Issue number23-24
DOIs
Publication statusPublished - 15 Dec 2009

Bibliographical note

Funding Information: This work was supported by the European Union Sixth Framework through RII3-EURONS. K. Bharuth-Ram, H. Masenda and D. Naidoo acknowledge support from the South African National Research Foundations. T.E. Mølholt acknowledges support from the Icelandic Research Fund.

Other keywords

  • Defect complexes
  • Mn and Fe ion implantation
  • Mössbauer spectroscopy
  • ZnO

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