Einar Örn Sveinbjörnsson -

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1 Álíkar rannsakendur

65 Grein
27 Ráðstefnuframlag
18 Ráðstefnugrein
4 Kafli
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- 1 Athugasemd/rökræður/viðtal
- 1 Ritstjórnargrein

Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Vidarsson, A. M., Persson, A. R., Chen, J. T., Haasmann, D., Hassan, J., Dimitrijev, S., Rorsman, N., Darakchieva, V. & Sveinbjörnsson, E., 2024, Solid State Phenomena. Trans Tech Publications Ltd, s. 59-64 6 s. (Solid State Phenomena; bind. 358).
Háskóli Íslands
Rannsóknarafurð: Kafli í bók/skýrslu/ráðstefnuriti › Kafli › ritrýni

Opinn aðgangur
Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation
Vidarsson, A. M., Haasmann, D., Dimitrijev, S. & Sveinbjörnsson, E. Ö., 1 maí 2023, Í: AIP Advances. 13, 5, 055126.
Háskóli Íslands
Rannsóknarafurð: Framlag til fræðitímarits › Grein › ritrýni

Opinn aðgangur
Observations of very fast electron traps at SiC/high-κ dielectric interfaces
Vidarsson, A. M., Persson, A. R., Chen, J. T., Haasmann, D., Hassan, J. U., Dimitrijev, S., Rorsman, N., Darakchieva, V. & Sveinbjörnsson, E. Ö., 1 nóv. 2023, Í: APL Materials. 11, 11, 111121.
Háskóli Íslands
Rannsóknarafurð: Framlag til fræðitímarits › Grein › ritrýni

Opinn aðgangur
Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO₂ Interface Using Sodium Enhanced Oxidation
Vidarsson, A. M., Haasmann, D., Dimitrijev, S. & Sveinbjörnsson, E., 2023, Materials Science Forum. Trans Tech Publications Ltd, s. 101-105 5 s. (Materials Science Forum; bind. 1090).
Háskóli Íslands
Rannsóknarafurð: Kafli í bók/skýrslu/ráðstefnuriti › Kafli › ritrýni

Opinn aðgangur
The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers
Ghezellou, M., Kumar, P., Bathen, M. E., Karsthof, R., Sveinbjörnsson, E. Ö., Grossner, U., Bergman, J. P., Vines, L. & Ul-Hassan, J., 1 mar. 2023, Í: APL Materials. 11, 3, 031107.
Háskóli Íslands
Rannsóknarafurð: Framlag til fræðitímarits › Grein › ritrýni

Opinn aðgangur

Einar Örn Sveinbjörnsson

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Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces

Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation

Observations of very fast electron traps at SiC/high-κ dielectric interfaces

Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO₂ Interface Using Sodium Enhanced Oxidation

The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers

Einar Örn Sveinbjörnsson

Fingerprint

Samstarf og helstu rannsóknarsvið síðastliðin fimm ár

Rannsóknarafurð

Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces

Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation

Observations of very fast electron traps at SiC/high-κ dielectric interfaces

Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO2 Interface Using Sodium Enhanced Oxidation

The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers

Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO₂ Interface Using Sodium Enhanced Oxidation