Dx-like defects in AlGaN/GaN structures by means of noise spectroscopy

D. Seghier; H. P. Gislason

doi:10.1016/j.mssp.2006.01.065

Dx-like defects in AlGaN/GaN structures by means of noise spectroscopy

D. Seghier
, H. P. Gislason

Raunvísindadeild

Háskóli Íslands

Rannsóknarafurð: Framlag til fræðitímarits › Grein › ritrýni

Útdráttur

We present experimental results on the noise of Au/Al_0.3Ga_0.7N/GaN-based structures. The layers are as-grown n-type and were fabricated using metalorganic chemical vapor deposition. We find that the low-frequency part of the spectrum is dominated by the 1/f noise. A generation-recombination component of the noise is observed in the annealed samples. It originates from a local center present in the AlGaN layer in the vicinity of the GaN layer. It has a large capture energy barrier and disappears from the noise spectrum after illumination which suggests that it has a DX-like nature. This center may be partially responsible for the persistent photoconductivity and the collapse of the dc drain current observed in AlGaN/GaN heterostructures.

Upprunalegt tungumál	Enska
Síður (frá-til)	41-44
Síðufjöldi	4
Fræðitímarit	Materials Science in Semiconductor Processing
Bindi	9
Númer tölublaðs	1-3
DOI	https://doi.org/10.1016/j.mssp.2006.01.065
Útgáfustaða	Útgefið - feb. 2006

Athugasemd

Funding Information: This research was supported by the Icelandic Research Council and the University of Iceland Research Fund. We are grateful to EMCORE for providing the samples used in this study.

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10.1016/j.mssp.2006.01.065

Vitna í þetta

@article{0cce27ee8efe41e895850d87ec9a3771,

title = "Dx-like defects in AlGaN/GaN structures by means of noise spectroscopy",

abstract = "We present experimental results on the noise of Au/Al0.3Ga0.7N/GaN-based structures. The layers are as-grown n-type and were fabricated using metalorganic chemical vapor deposition. We find that the low-frequency part of the spectrum is dominated by the 1/f noise. A generation-recombination component of the noise is observed in the annealed samples. It originates from a local center present in the AlGaN layer in the vicinity of the GaN layer. It has a large capture energy barrier and disappears from the noise spectrum after illumination which suggests that it has a DX-like nature. This center may be partially responsible for the persistent photoconductivity and the collapse of the dc drain current observed in AlGaN/GaN heterostructures.",

keywords = "AlGaN/GaN, Defects, Noise spectroscopy",

author = "D. Seghier and Gislason, \{H. P.\}",

note = "Funding Information: This research was supported by the Icelandic Research Council and the University of Iceland Research Fund. We are grateful to EMCORE for providing the samples used in this study.",

year = "2006",

month = feb,

doi = "10.1016/j.mssp.2006.01.065",

language = "English",

volume = "9",

pages = "41--44",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd.",

number = "1-3",

}

TY - JOUR

T1 - Dx-like defects in AlGaN/GaN structures by means of noise spectroscopy

AU - Seghier, D.

AU - Gislason, H. P.

N1 - Funding Information: This research was supported by the Icelandic Research Council and the University of Iceland Research Fund. We are grateful to EMCORE for providing the samples used in this study.

PY - 2006/2

Y1 - 2006/2

N2 - We present experimental results on the noise of Au/Al0.3Ga0.7N/GaN-based structures. The layers are as-grown n-type and were fabricated using metalorganic chemical vapor deposition. We find that the low-frequency part of the spectrum is dominated by the 1/f noise. A generation-recombination component of the noise is observed in the annealed samples. It originates from a local center present in the AlGaN layer in the vicinity of the GaN layer. It has a large capture energy barrier and disappears from the noise spectrum after illumination which suggests that it has a DX-like nature. This center may be partially responsible for the persistent photoconductivity and the collapse of the dc drain current observed in AlGaN/GaN heterostructures.

AB - We present experimental results on the noise of Au/Al0.3Ga0.7N/GaN-based structures. The layers are as-grown n-type and were fabricated using metalorganic chemical vapor deposition. We find that the low-frequency part of the spectrum is dominated by the 1/f noise. A generation-recombination component of the noise is observed in the annealed samples. It originates from a local center present in the AlGaN layer in the vicinity of the GaN layer. It has a large capture energy barrier and disappears from the noise spectrum after illumination which suggests that it has a DX-like nature. This center may be partially responsible for the persistent photoconductivity and the collapse of the dc drain current observed in AlGaN/GaN heterostructures.

KW - AlGaN/GaN

KW - Defects

KW - Noise spectroscopy

UR - https://www.scopus.com/pages/publications/33744524295

U2 - 10.1016/j.mssp.2006.01.065

DO - 10.1016/j.mssp.2006.01.065

M3 - Article

SN - 1369-8001

VL - 9

SP - 41

EP - 44

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1-3

ER -

Dx-like defects in AlGaN/GaN structures by means of noise spectroscopy

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