Hysteresis modeling in graphene field effect transistors

Graphene field effect transistors with an Al₂O₃ gate dielectric are fabricated on H-intercalated bilayer graphene grown on semi-insulating 4H-SiC by chemical vapour deposition. DC measurements of the gate voltage v_g versus the drain current i_d reveal a severe hysteresis of clockwise orientation. A capacitive model is used to derive the relationship between the applied gate voltage and the Fermi energy. The electron transport equations are then used to calculate the drain current for a given applied gate voltage. The hysteresis in measured data is then modeled via a modified Preisach kernel.