Mössbauer study of 119Sn in 119In * implanted 3C-SiC

Hilary Masenda; Krishanlal Bharuth-Ram; Deena Naidoo; Haraldur Páll Gunnlaugsson; Torben Esmann Mølholt; Haflidi Petur Gislason; Karl Johnston; Roberto Mantovan; Rainer Sielemann; Guido Langouche; Sveinn Olafson; Gerd Weyer

doi:10.1007/s10751-011-0438-x

Mössbauer study of ¹¹⁹Sn in ¹¹⁹In ^* implanted 3C-SiC

Hilary Masenda
, Krishanlal Bharuth-Ram
, Deena Naidoo
, Haraldur Páll Gunnlaugsson
, Torben Esmann Mølholt
, Haflidi Petur Gislason
, Karl Johnston
, Roberto Mantovan
, Rainer Sielemann
, Guido Langouche
, Sveinn Olafson
, Gerd Weyer

Háskóli Íslands

Rannsóknarafurð: Framlag til fræðitímarits › Grein › ritrýni

Útdráttur

¹¹⁹Sn Mössbauer measurements have been made on a 3C-SiC single crystal implanted with 60 keV precursor radioactive ¹¹⁹In ^* ions at ISOLDE/CERN. Spectra collected at sample temperatures of 300-670 K have been analysed in terms of two single lines and a quadrupole split doublet, which based on their isomer shifts are assigned respectively to Sn ions located on substitutional Si sites (Sn _Si) and interstitial sites (Sn _I) and in defect complexes near substitutional sites. The substitutional Sn _Si fraction increases from 25% at room temperature to 60% at 680 K.

Upprunalegt tungumál	Enska
Síður (frá-til)	71-74
Síðufjöldi	4
Fræðitímarit	Hyperfine Interactions
Bindi	208
Númer tölublaðs	1-3
DOI	https://doi.org/10.1007/s10751-011-0438-x
Útgáfustaða	Útgefið - mar. 2012

Athugasemd

Funding Information: Acknowledgements This work was supported by the NRF (South Africa), RII3-EURONS, the Cariplo Foundation, the German BMBF and the Icelandic Research Fund.

Aðgangur að skjali

10.1007/s10751-011-0438-x

Vitna í þetta

@article{f35a9a302bed44b090cb596f87fe0e5f,

title = "M{\"o}ssbauer study of 119Sn in 119In * implanted 3C-SiC",

abstract = "119Sn M{\"o}ssbauer measurements have been made on a 3C-SiC single crystal implanted with 60 keV precursor radioactive 119In * ions at ISOLDE/CERN. Spectra collected at sample temperatures of 300-670 K have been analysed in terms of two single lines and a quadrupole split doublet, which based on their isomer shifts are assigned respectively to Sn ions located on substitutional Si sites (Sn Si) and interstitial sites (Sn I) and in defect complexes near substitutional sites. The substitutional Sn Si fraction increases from 25\% at room temperature to 60\% at 680 K.",

keywords = "In implantation, SiC, Sn-M{\"o}ssbauer spectroscopy",

author = "Hilary Masenda and Krishanlal Bharuth-Ram and Deena Naidoo and Gunnlaugsson, \{Haraldur P{\'a}ll\} and M{\o}lholt, \{Torben Esmann\} and Gislason, \{Haflidi Petur\} and Karl Johnston and Roberto Mantovan and Rainer Sielemann and Guido Langouche and Sveinn Olafson and Gerd Weyer",

note = "Funding Information: Acknowledgements This work was supported by the NRF (South Africa), RII3-EURONS, the Cariplo Foundation, the German BMBF and the Icelandic Research Fund.",

year = "2012",

month = mar,

doi = "10.1007/s10751-011-0438-x",

language = "English",

volume = "208",

pages = "71--74",

journal = "Hyperfine Interactions",

issn = "0304-3843",

publisher = "Springer Nature",

number = "1-3",

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TY - JOUR

T1 - Mössbauer study of 119Sn in 119In * implanted 3C-SiC

AU - Masenda, Hilary

AU - Bharuth-Ram, Krishanlal

AU - Naidoo, Deena

AU - Gunnlaugsson, Haraldur Páll

AU - Mølholt, Torben Esmann

AU - Gislason, Haflidi Petur

AU - Johnston, Karl

AU - Mantovan, Roberto

AU - Sielemann, Rainer

AU - Langouche, Guido

AU - Olafson, Sveinn

AU - Weyer, Gerd

N1 - Funding Information: Acknowledgements This work was supported by the NRF (South Africa), RII3-EURONS, the Cariplo Foundation, the German BMBF and the Icelandic Research Fund.

PY - 2012/3

Y1 - 2012/3

N2 - 119Sn Mössbauer measurements have been made on a 3C-SiC single crystal implanted with 60 keV precursor radioactive 119In * ions at ISOLDE/CERN. Spectra collected at sample temperatures of 300-670 K have been analysed in terms of two single lines and a quadrupole split doublet, which based on their isomer shifts are assigned respectively to Sn ions located on substitutional Si sites (Sn Si) and interstitial sites (Sn I) and in defect complexes near substitutional sites. The substitutional Sn Si fraction increases from 25% at room temperature to 60% at 680 K.

AB - 119Sn Mössbauer measurements have been made on a 3C-SiC single crystal implanted with 60 keV precursor radioactive 119In * ions at ISOLDE/CERN. Spectra collected at sample temperatures of 300-670 K have been analysed in terms of two single lines and a quadrupole split doublet, which based on their isomer shifts are assigned respectively to Sn ions located on substitutional Si sites (Sn Si) and interstitial sites (Sn I) and in defect complexes near substitutional sites. The substitutional Sn Si fraction increases from 25% at room temperature to 60% at 680 K.

KW - In implantation

KW - SiC

KW - Sn-Mössbauer spectroscopy

UR - https://www.scopus.com/pages/publications/84859604885

U2 - 10.1007/s10751-011-0438-x

DO - 10.1007/s10751-011-0438-x

M3 - Article

SN - 0304-3843

VL - 208

SP - 71

EP - 74

JO - Hyperfine Interactions

JF - Hyperfine Interactions

IS - 1-3

ER -