@inproceedings{f48af06524b942ec8808966560d3a145,
title = "Reduction in the density of interface states at the SiO2/4H-SiC interface after dry oxidation in the presence of potassium",
abstract = "We report a strong reduction in the density of near-interface traps (NITs) at the SiO2/4H-SiC interface after dry oxidation in the presence of potassium. This is accompanied by a significant enhancement of the oxidation rate. The results are in line with recent investigations of the effect of sodium on oxidation of 4H-SiC. It is evident that both alkali metals enhance the oxidation rate of SiC and strongly influence the energy distribution of interface states.",
keywords = "Alkali metal, Interface state, Oxidation, SiC",
author = "Hermannsson, \{P{\'e}tur Gordon\} and Sveinbj{\"o}rnsson, \{Einar {\"O}\}",
year = "2011",
doi = "10.4028/www.scientific.net/MSF.679-680.334",
language = "English",
isbn = "9783037850794",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "334--337",
editor = "Monakhov, \{Edouard V.\} and Tamas Hornos and Svensson, \{Bengt G.\}",
booktitle = "Silicon Carbide and Related Materials 2010",
address = "Switzerland",
}